Doping dependent intrinsic magnetization in silicon in Ni/Si heterostructures

Doping dependent intrinsic magnetization in silicon in Ni/Si heterostructures

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Abstract This investigation delves into the complex interaction at metal-semiconductor interfaces, highlighting the magnetic proximity effect in Ni/Si interfaces through systematic X-ray magnetic circular dichroism (XMCD) studies at Ni and Si edges.We analyzed two Ni/Si heterostructures with differing semiconductor doping, uncovering a magnetic proximity effect manifesting as equilibrium magnetization in the semiconductor substrate induced by the adjacent hand wipes individual packets Ni layer.Our results display distinct magnetization signs corresponding to the doping levels: low-doped samples show parallel alignment to the Ni layer, while high-doped samples align antiparallel, indicating a nuanced interplay of underlying magnetization mechanisms.These findings pinpoint the roles of electron tunneling and exchange splitting modification in the magnetization behavior.The study enriches the iphone 12 price georgia understanding of ferromagnetic-semiconductor interface behavior, setting a precedent for the design of advanced spintronic devices that leverage the nuanced magnetic properties of these hybrid systems.